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p-dso-28-14 data sheet 1 2003-03-06 trilithic data sheet bts 7741 g 1overview 1.1 features quad d-mos switch driver free configurable as bridge or quad-switch optimized for dc motor management applications low r ds on : 110 m ? high-side switch, 100 m ? low- side switch (typical values @ 25 c) maximum peak current: typ. 10 a @ 25 c = very low quiescent current: typ. 5 a @ 25 c = small outline, enhanced power p-dso-package full short-circuit-protection operates up to 40 v status flag diagnosis overtemperature shut down with hysteresis internal clamp diodes open load detection in off-mode under-voltage detection with hysteresis pwm frequencies up to 1 khz 1.2 description the bts 7741 g is part of the trilithic family containing three dies in one package: one double high-side switch and two low-side switches. the drains of these three vertical dmos chips are mounted on separated lead frames. the sources are connected to individual pins, so the bts 7741 g can be used in h-bridge- as well as in any other configuration. both the double high-side and the two low-side switches of the bts 7741 g are manufactured in smart sipmos ? technology which combines low r ds on vertical dmos power stages with cmos control circuitry. the high-side switch is fully protected and contains the control and diagnosis circuitry. also the low-side switches are fully protected, the equivalent standard product is the bsp 77 . in contrast to the bts 7740 g , the bts 7741 g offers an open load in off-mode detection and slightly increased current limitation. type ordering code package bts 7741 g q67007-a9554 p-dso-28-14
bts 7741 g data sheet 2 2003-03-06 pin configuration (top view) figure 1 28 dl1 25 dl1 27 sl1 26 sl1 24 dhvs 23 sh1 22 sh1 21 sh2 20 sh2 19 dhvs 18 dl2 15 dl2 16 sl2 17 sl2 1 dl1 5 dhvs 4 n.c. 3 dl1 2 il1 6 gnd 7 ih1 8 st 9 ih2 10 dhvs 11 dl2 14 n.c. 13 dl2 12 il2 hs-leadframe ls-leadframe ls-leadframe
bts 7741 g data sheet 3 2003-03-06 pins written in bold type need power wiring. 1.3 pin definitions and functions pin no. symbol function 1, 3, 25, 28 dl1 drain of low-side switch1, lead frame 1 1) 2 il1 analog input of low-side switch1 4 n.c. not connected 5, 10, 19, 24 dhvs drain of high-side switches and power supply voltage, lead frame 2 1) 6 gnd ground 7 ih1 digital input of high-side switch1 8 st status of high-side switches; open drain output 9 ih2 digital input of high-side switch2 11 n.c. not connected 12, 14, 15, 18 dl2 drain of low-side switch2, lead frame 3 1) 13 il2 analog input of low-side switch2 16,17 sl2 source of low-side switch2 20,21 sh2 source of high-side switch2 22,23 sh1 source of high-side switch1 26,27 sl1 source of low-side switch1 1) to reduce the thermal resistance these pins are direct connected via metal bridges to the lead frame.
bts 7741 g data sheet 4 2003-03-06 1.4 functional block diagram figure 2 block diagram sh2 dhvs st il1 gnd ih1 sl2 ih2 il2 sl1 dl2 sh1 dl1 5,10,19,24 9 7 20,21 16, 17 6 13 2 r o1 r o2 biasing and protection diagnosis driver out 0 in 0 l l 0 1 l h 1 0 h l 1 1 h h 22, 23 1,3,25,28 8 26, 27 12,14,15,18 protection gate driver protection gate driver
bts 7741 g data sheet 5 2003-03-06 1.5 circuit description input circuit the control inputs ih1,2 consist of ttl/cmos compatible schmitt-triggers with hysteresis. buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. the inputs are protected by esd clamp-diodes. the inputs il1 and il2 are connected to the internal gate-driving units of the n-channel vertical power-mos-fets. output stages the output stages consist of an low r ds on power-mos h-bridge. in h-bridge configuration, the d-mos body diodes can be used for freewheeling when commutating inductive loads. if the high-side switches are used as single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by integrated power clamp diodes. short circuit protection the outputs are protected against ? output short circuit to ground ? output short circuit to the supply voltage, and ? overload (load short circuit). an internal op-amp controls the drain-source-voltage by comparing the ds-voltage- drop with an internal reference voltage. above this trip point the op-amp reduces the output current depending on the junction temperature and the drop voltage. in the case of overloaded high-side switches the status output is set to low. the fully protected low-side switches have no status output. overtemperature protection the high-side and the low-side switches also incorporate an over temperature protection circuit with hysteresis which switches off the output transistors. in the case of the high- side switches, the status output is set to low. undervoltage-lockout (uvlo) when v s reaches the switch-on voltage v uvon the ic becomes active with a hysteresis. the high-side output transistors are switched off if the supply voltage v s drops below the switch off value v uvoff.
bts 7741 g data sheet 6 2003-03-06 open load detection open load is detected by voltage measurement in off state. if the output voltage exceeds a specified level the error flag is set with a delay. status flag the status flag output is an open drain output with zener-diode which requires a pull-up resistor, c.f. the application circuit on page 14. various errors as listed in the table ?diagnosis? are detected by switching the open drain output st to low. an open load detection is available when there is an external resistor < r 0 from sh1 and sh2 pin to dhvs or vs. in order to reach low quiescent current, we recommend to disconnect this resistor when not used. 2 truth table and diagnosis (valid only for the high-side-switches) flag ih1 ih2 sh1 sh2 st remarks inputs outputs normal operation; identical with functional truth table 0 0 1 1 0 1 0 1 l l h h l h l h 1 1 1 1 stand-by mode switch2 active switch1 active both switches active open load at high-side switch 1 open load at high-side switch 2 0 1 x x x x 0 1 z h x x x x z h 0 1 0 1 detected detected overtemperature high-side switch1 0 1 x x l l x x 1 0detected overtemperature high-side switch2 x x 0 1 x x l l 1 0detected overtemperature both high-side switches 0 x 1 0 1 x l l l l l l 1 0 0 detected detected under voltage x x l l 1 not detected inputs: outputs: status: 0 = logic low z = output in tristate condition 1 = no error 1 = logic high l = output in sink condition 0 = error x = don?t care h = output in source condition x = voltage level undefined
bts 7741 g data sheet 7 2003-03-06 3 electrical characteristics 3.1 absolute maximum ratings ? 40 c < t j < 150 c parameter symbol limit values unit remarks min. max. high-side-switches (pins dhvs, ih1,2 and sh1,2) supply voltage v s ? 0.3 42 v ? supply voltage for full short circuit protection v s(scp) 28 v hs-drain current* i s ? 7 ** a t a = 25c; t p < 100 ms hs-input current i ih ? 5 5 ma pin ih1 and ih2 hs-input voltage v ih ? 10 16 v pin ih1 and ih2 note: * single pulse ** internally limited status output st status pull up voltage v st ? 0.3 5.4 v status output current i st ? 5 5 ma pin st low-side-switches (pins dl1,2, il1,2 and sl1,2) drain-source-clamp voltage v dsl 42 ? v v il =0v; i d 1ma supply voltage for short circuit protection v dsl(scp) 30 v v il =5v 20 v v il =10v ls-drain current* i dl ? 7 ** a t a = 25c; t p < 100 ms ls-input voltage v il ? 0.3 10 v ? note: * single pulse ** internally limited temperatures junction temperature t j ? 40 150 c? storage temperature t stg ? 55 150 c?
bts 7741 g data sheet 8 2003-03-06 note: maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. note: in the operating range the functions given in the circuit description are fulfilled. thermal resistances (one hs-ls-path active) ls-junction case r thjc l ? 20 k/w measured to pin 3 or 12 hs-junction case r thjc h ? 20 k/w measured to pin 19 junction ambient r thja = t j(hs) /(p (hs) +p (ls) ) r thja ? 60 k/w device soldered to reference pcb with 6cm 2 cooling area esd protection (human body model acc. mil std 883d, method 3015.7 and eos/ esd assn. standard s5.1 - 1993) input ls-switch v esd ?2kv input hs-switch v esd ?1kv status hs-switch v esd ?2kv output ls and hs-switch v esd ? 8 kv all other pins connected to ground 3.2 operating range ? 40 c < t j < 150 c parameter symbol limit values unit remarks min. max. supply voltage v s v uvoff 42 v after v s rising above v uvon input voltages v ih ? 0.3 15 v ? input voltages v il ? 0.3 10 v ? output current i st 02ma? junction temperature t j ? 40 150 c? 3.1 absolute maximum ratings (cont?d) ? 40 c < t j < 150 c parameter symbol limit values unit remarks min. max.
bts 7741 g data sheet 9 2003-03-06 3.3 electrical characteristics i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symbol limit values unit test condition min. typ. max. current consumption hs-switch quiescent current i s ?58 a ih1 = ih2 = 0 v t j = 25 c ??12 a ih1 = ih2 = 0 v supply current i s ? 1.5 3 ma ih1 or ih2 = 5 v v s = 12 v ?36maih1 and ih2 = 5v v s = 12 v leakage current of high-side switch i sh lk ??6 a v ih = v sh = 0 v leakage current through logic gnd in free wheeling condition i lkcl = i fh + i sh ??10ma i fh = 3 a current consumption ls-switch input current i il ?830 a v il = 5 v; normal operation ? 160 300 a v il = 5 v; failure mode leakage current of low-side switch i dl lk ?210 a v il = 0 v under voltage lockout (uvlo) hs-switch switch-on voltage v uvon ??4.8v v s increasing switch-off voltage v uvoff 1.8 ? 3.5 v v s decreasing switch on/off hysteresis v uvhy ?1?v v uvon ? v uvoff
bts 7741 g data sheet 10 2003-03-06 output stages inverse diode of high-side switch; forward-voltage v fh ?0.81.2v i fh = 3 a inverse diode of low-side switch; forward-voltage v fl ?0.81.2v i fl = 3 a static drain-source on-resistance of high-side switch r ds on h ?110140m ? i sh =1a t j = 25 c static drain-source on-resistance of low-side switch r ds on l ?100120m ? i sl =1a; v gl = 5 v t j = 25 c static path on-resistance r ds on ??500m ? r ds on h +r ds on l i sh =1a; short circuit of high-side switch to gnd initial peak sc current i scp h 9 1114a t j = ? 40 c 8 1013a t j = + 25 c 6810a t j = + 150 c short circuit of high-side switch to v s output pull-down-resistor r o 12 22 50 k ? v dsl = 3 v short circuit of low-side switch to v s initial peak sc current i scp l 14 17 22 a t j = ? 40 c 12 15 20 a t j = 25 c 8.51015a t j = 150 c note: integrated protection functions are designed to prevent ic destruction under fault conditions. protection functions are not designed for continuous or repetitive operation. 3.3 electrical characteristics (cont?d) i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symbol limit values unit test condition min. typ. max.
bts 7741 g data sheet 11 2003-03-06 thermal shutdown thermal shutdown junction temperature t j sd 155 180 190 c? thermal switch-on junction temperature t j so 150 170 180 c? temperature hysteresis ? t ?10? c ? t = t jsd ? t jso status flag output st of high-side switch low output voltage v st l ?0.20.6v i st = 1.6 ma leakage current i st lk ??10 a v st = 5 v zener-limit-voltage v st z 5.4 ? v i st = 1.6 ma open load detection in off condition open load detection voltage v out(ol) 1.8 2.8 4 v status change after neg. input slope with ol t d(ol) 500 s v s = 12 v switching times of high-side switch turn-on-time; to 90% v sh t on ? 85 180 sr load = 12 ? v s = 12 v turn-off-time; to 10% v sh t off ? 80 180 sr load = 12 ? v s = 12 v slew rate on 10 to 30% v sh dv/dt on ??1.2v / sr load = 12 ? v s = 12 v slew rate off 70 to 40% v sh -dv/ dt off ??1.5v / sr load = 12 ? v s = 12 v note: switching times are not subject to production test - specified by design 3.3 electrical characteristics (cont?d) i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symbol limit values unit test condition min. typ. max.
bts 7741 g data sheet 12 2003-03-06 note: the listed characteristics are ensured over the operating range of the integrated circuit. typical characteristics specified mean values expected over the production spread. if not otherwise specified, typical characteristics apply at t a = 25 c and the given supply voltage. switching times of low-side switch turn on time to 10% v dl v il = 0 to 10 v t on ?50150 sr load = 10 ? v s = 12 v turn-off-time; to 90% v dl t off ?60150 sr load = 10 ? v s = 12 v slew rate on 70 to 50% v sh v il = 0 to 10 v -dv/dt on ?11.5v / sr load = 4.7 ? v s = 12 v slew rate off 50 to 70% v sh v il = 0 to 10 v dv/dt off ?11.5v / sr load = 4.7 ? v s = 12 v note: switching times are not subject to production test - specified by design control inputs of high-side switches gh 1, 2 h-input voltage v ih high ??2.5v? l-input voltage v ih low 1??v? input voltage hysteresis v ih hy ?0.3?v? h-input current i ih high 15 30 60 a v ih = 5 v l-input current i ih low 5?20 a v ih = 0.4 v input series resistance r i 2.7 4 5.5 k ? ? zener limit voltage v ih z 5.4??v i ih = 1.6 ma control inputs gl1, 2 gate-threshold-voltage v il th 0.9 1.7 2.2 v i dl = 2 ma 3.3 electrical characteristics (cont?d) i sh1 = i sh2 = i sl1 = i sl2 = 0 a; ? 40 c < t j < 150 c; 8 v < v s < 18 v unless otherwise specified parameter symbol limit values unit test condition min. typ. max.
bts 7741 g data sheet 13 2003-03-06 figure 3 test circuit hs-source-current named during short circuit named during leakage- cond. i sh1,2 i scp h i dl lk sh2 dhvs st il1 gnd ih1 sl2 5,10,19,24 9 7 20,21 16,17 6 13 2 r o1 r o2 biasing and protection 22,23 1,3,25,28 8 ih2 il2 26,27 12,14,15,18 sl1 dl2 sh1 dl1 i gnd i lkcl v s =12v c l 100f c s 470nf i fh1,2 i s i sh2 i dl2 i sh1 i dl1 i dl lk 2 i dl lk 1 v dsl1 - v fl1 v dsl2 - v fl2 - v fh2 v dsh2 - v fh1 v dsh1 v uvon v uvoff i sl2 i sl1 i scp l 1 i scp l 2 v il2 v il th 2 v il1 v il th 1 v st v stl v stz v ih1 v ih2 gate driver gate driver diagnosis i st i st lk i ih1 i ih1 i il1 i il2 protection gate driver protection gate driver
bts 7741 g data sheet 14 2003-03-06 figure 4 application circuit sh2 dhvs st il1 gnd ih1 sl2 5,10,19,24 9 7 20,21 16,17 6 13 2 tle 4278g v s =12v d01 z39 c s 10f c d 47nf d i q reset watchdog c q 22f v cc wd r gnd p protection gate driver protection gate driver r o1 r o2 biasing and protection m 22,23 1,3,25,28 8 ih2 il2 26,27 12,14,15,18 sl1 dl2 sh1 dl1 r q 100 k ? ? ? ? r s 10 k ? ? ? ? gate driver gate driver diagnosis in case of v dsl <-0.6v or reverse battery the current into the c might be limited by external resitors to protect the c optional for open load in off r ol 1 k ? to c bcr192w
bts 7741 g data sheet 15 2003-03-06 4 package outlines 114 15 28 18.1 -0.4 index marking 1) 2.45 -0.1 7.6 10.3 ?.3 -0.2 0.2 2.65 max -0.2 1.27 0.23 +0.09 0.1 0.4 0.35 x 45? +0.8 +0.15 0.35 2) 8? max 0.2 28x 1) 2) does not include dambar protrusion of 0.05 max per side 1) does not include plastic or metal protrusions of 0.15 max rer side gps05123 p-dso-28-14 (plastic transistor single outline package) gps05123 sorts of packing package outlines for tubes, trays etc. are contained in our data book ?package information?. dimensions in mm smd = surface mounted device
bts 7741 g data sheet 16 2003-03-06 edition 2003-01 published by infineon technologies ag, st.-martin-strasse 53, d-81669 mnchen, germany ? infineon technologies ag 3/13/03. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer information for further information on technology, delivery terms and conditions and prices please contact your nearest infi- neon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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